RF Amplifiers

- Analog Devices, Inc. (NASDAQ: ADI) defines innovation and excellence in signal processing. ADI's analog, mixed-signal, and digital signal processing (DSP) integrated circuits (IC) play a fundamental role in converting, conditioning, and processing real-world phenomena such as light, sound, temperature, motion, and pressure into electrical signals to be used in a wide array of electronic equipment. ADI is synonymous with high performance among electronics manufacturers and we collaborate with our customers to define the very best in the quality of the user experience. That means the clearest image, crispest sound, and optimum interface, size and performance in thousands of entertainment, medical, communications, industrial and other applications. Analog Devices, Inc. has completed its acquisition of Hittite Microwave Corporation. Hittite will be part of ADI’s RF and Microwave Group (RFMG). Analog Devices, Inc. acquires Linear Technology: With the combined 80 years of technology excellence, ADI becomes "The Premier Global Analog Technology Company". This new comprehensive portfolio gives customers an edge by market leading position, innovation, and commitment. More Information

- Broadcom Limited is a diversified global semiconductor leader built on 50 years of innovation, collaboration and engineering excellence. Broadcom’s extensive product portfolio serves multiple applications within four primary end markets: wired infrastructure, wireless communications, enterprise storage and industrial & others. Applications for our products in these end markets include: data center networking, home connectivity, broadband access, telecommunications equipment, smartphones and base stations, data center servers and storage, factory automation, power generation and alternative energy systems, and displays.

- RFMD®, a leading RFIC supplier, offers an extensive product portfolio including gain blocks, pre-drivers, drivers, LNAs, direct modulators, demodulators and power transistors for wireless infrastructure and CATV applications. All RoHS compliant and Pb-Free, our products offer the highest linearity and broadband performance required for wireless infrastructure standards, while paying special attention to thermal performance and reliability to ensure our products meet tough industry standards. Our RF386X series of GaAs pHEMT low-noise amplifiers (LNAs) offers broadband performance (380 MHz – 3800 MHz), excellent low noise, high gain, and high output IP3 performance. RFMD’s infrastructure roadmap also includes the commercialization of gallium nitride (GaN) High Power Transistors and Broadband Amplifiers.

- MicroWave Technology, Inc. is a leading manufacturer of RF & microwave discrete semiconductor products, GaAs and GaN RF power amplifiers, low noise pHEMT devices, MMICs, wireless amplifiers, hybrid modules, and connectorized microwave amplifiers. Located in California’s Silicon Valley, MicroWave Technology, Inc. (MwT) was founded in 1982 by technical principals with broad experience in Gallium Arsenide (GaAs) device design and fabrication. With a factory occupying 35,000 square feet, the company’s principal assets include both its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. The vertical manufacturing and product strength provide MwT uncommon flexibility and opportunity in the microwave component marketplace. MwT is a leading U.S. based merchant manufacturer of discrete Gallium Arsenide diodes and transistors (FETs, pHEMTs, and Gunn Diodes). Early work focusing on device reliability resulted in proprietary metallization systems which make MwT’s devices impervious to hydrogen contamination, now an item of great concern to the high-reliability industry. These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48 dBm IP3 in a 1 W P-1 dB Wireless Amp) and low phase noise (-125 dBc @ 100 KHz Offset in a 17.5 GHz DRO) devices with power outputs ranging from 10 milliwatts to 5 watts. These devices, sold as chips or in packages, find wide use in the amplification of signals from 10 MHz to 40 GHz in the transmission or reception of information in wireless infrastructure systems, industrial RF applications, and in various defense and space electronics. By taking advantage of the low intermodulation distortion characteristics of MwT’s GaAs FETs, the company has enjoyed a growing reputation for its product line of small internally matched modular surface mount transmit and receive amplifier modules aimed at multi-carrier and/or digitally modulated (high linearity) wireless infrastructure and military communication systems. Principal applications are as receiver front ends and as driver or picocell output amplifiers in cellular, PCS and WLL base station and military high reliability communication. Noteworthy new products have extremely low input and output return loss providing ease of gain insertion in highly critical high linearity power amplifier cascades. MwT offers its high-reliability proven thin film circuit processing capability to both internal and external customer’s usage. Employing thin film hybrid microcircuit construction, MwT produces and markets various standard modular amplifier products to 26 GHz. These modules are also building elements for MwT to design and manufacture standard as well as custom connectorized amplifiers for defense and telecommunication applications. MwT has many years of experience creating specialized designs for customers and has a vast library of custom designs based on MwT devices. MwT uses both its standard and custom versions of its parts to produce specialized amplifiers and board level products. Our proven experience and track record can help you save design cost, time, and engineering resource. Examples include low frequency LNA, Wireless LNA booster amplifier, Integrated building blocks, high frequency oscillators, evaluation boards and test fixtures.