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Home Products Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single 2SD2096T114E
LAPIS Semiconductor LAPIS Semiconductor
2SD2096T114E
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2SD2096T114E

Part Number: 2SD2096T114E
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS NPN 60V 3A HRT/TO-220FP
Datasheets: 1.2SD2096T114E.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of 2SD2096T114E

Part Number 2SD2096T114E Manufacturer LAPIS Semiconductor
Series -Packaging Cut Tape (CT)
Description TRANS NPN 60V 3A HRT/TO-220FPOther Names 2SD2096T114ECT
Power - Max 1.8WMounting Type Through Hole
Package / Case HRTTransistor Type NPN
Base Part Number 2SD2096Quantity Available 61986 pcs
Detailed Description Bipolar (BJT) Transistor NPN 60V 3A 8MHz 1.8W Through Hole HRTOperating Temperature 150°C (TJ)
Frequency - Transition 8MHzSupplier Device Package HRT
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2ACurrent - Collector (Ic) (Max) 3A
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Cutoff (Max) 10µA (ICBO)
Moisture Sensitivity Level (MSL) 1 (Unlimited)DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max) 60V
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