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Home Products Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single, Pre-Biased DTA123JUAT106
LAPIS Semiconductor LAPIS Semiconductor
DTA123JUAT106
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DTA123JUAT106

Part Number: DTA123JUAT106
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS PREBIAS PNP 200MW UMT3
Datasheets: 1.DTA123JUAT106.pdf 2.DTA123JUAT106.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of DTA123JUAT106

Part Number DTA123JUAT106 Manufacturer LAPIS Semiconductor
Series -Packaging Original-Reel®
Description TRANS PREBIAS PNP 200MW UMT3Other Names DTA123JUAT106DKR
Power - Max 200mWMounting Type Surface Mount
Package / Case SC-70, SOT-323Transistor Type PNP - Pre-Biased
Base Part Number DTA123Quantity Available 513257 pcs
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3Resistor - Base (R1) 2.2 kOhms
Frequency - Transition 250MHzSupplier Device Package UMT3
Resistor - Emitter Base (R2) 47 kOhmsVce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 500nAMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5VVoltage - Collector Emitter Breakdown (Max) 50V
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