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Home Products Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single, Pre-Biased DTD113ZUT106
LAPIS Semiconductor LAPIS Semiconductor
DTD113ZUT106
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DTD113ZUT106

Part Number: DTD113ZUT106
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS PREBIAS NPN 200MW UMT3
Datasheets: 1.DTD113ZUT106.pdf 2.DTD113ZUT106.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of DTD113ZUT106

Part Number DTD113ZUT106 Manufacturer LAPIS Semiconductor
Series -Packaging Tape & Reel (TR)
Description TRANS PREBIAS NPN 200MW UMT3Other Names DTD113ZUT106-ND DTD113ZUT106TR
Power - Max 200mWMounting Type Surface Mount
Package / Case SC-70, SOT-323Transistor Type NPN - Pre-Biased
Base Part Number DTD113Quantity Available 701018 pcs
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount UMT3Resistor - Base (R1) 1 kOhms
Frequency - Transition 200MHzSupplier Device Package UMT3
Resistor - Emitter Base (R2) 10 kOhmsVce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max) 500mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 500nAMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 50mA, 5VVoltage - Collector Emitter Breakdown (Max) 50V
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