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FDB0165N807L
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FDB0165N807L

Part Number: FDB0165N807L
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 80V 310A TO263
Datasheets: 1.FDB0165N807L.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDB0165N807L

Part Number FDB0165N807L Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 80V 310A TO263
FET Feature -Other Names FDB0165N807LCT
Mounting Type Surface MountPackage / Case TO-263-7, D²Pak (6 Leads + Tab)
Quantity Available 15040 pcsVgs(th) (Max) @ Id 4V @ 250µA
Detailed Description N-Channel 80V 310A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263)Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.6 mOhm @ 36A, 10VPower Dissipation (Max) 3.8W (Ta), 300W (Tc)
Supplier Device Package D²PAK (TO-263)Gate Charge (Qg) (Max) @ Vgs 304nC @ 10V
Drain to Source Voltage (Vdss) 80VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 23660pF @ 40V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 310A (Tc)
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