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FDB0165N807L
| Part Number: | FDB0165N807L |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor / ON Semiconductor |
| Product description | MOSFET N-CH 80V 310A TO263 |
| Datasheets: | 1.FDB0165N807L.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of FDB0165N807L
| Part Number | FDB0165N807L | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Series | PowerTrench® | FET Type | N-Channel |
| Packaging | Cut Tape (CT) | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 80V 310A TO263 |
| FET Feature | - | Other Names | FDB0165N807LCT |
| Mounting Type | Surface Mount | Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Quantity Available | 15040 pcs | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Detailed Description | N-Channel 80V 310A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 36A, 10V | Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Supplier Device Package | D²PAK (TO-263) | Gate Charge (Qg) (Max) @ Vgs | 304nC @ 10V |
| Drain to Source Voltage (Vdss) | 80V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 23660pF @ 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 310A (Tc) |
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