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FGD3N60LSDTM-T
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FGD3N60LSDTM-T

Part Number: FGD3N60LSDTM-T
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description INTEGRATED CIRCUIT
Datasheets: 1.FGD3N60LSDTM-T.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FGD3N60LSDTM-T

Part Number FGD3N60LSDTM-T Manufacturer AMI Semiconductor / ON Semiconductor
Series -IGBT Type -
Input Type StandardDescription INTEGRATED CIRCUIT
Gate Charge 12.5nCPower - Max 40W
Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition 480V, 3A, 470 Ohm, 10VSwitching Energy 250µJ (on), 1mJ (off)
Quantity Available 6171 pcsTd (on/off) @ 25°C 40ns/600ns
Detailed Description IGBT 600V 6A 40W Surface Mount TO-252, (D-Pak)Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-252, (D-Pak)Vce(on) (Max) @ Vge, Ic 1.5V @ 10V, 3A
Reverse Recovery Time (trr) 234nsCurrent - Collector (Ic) (Max) 6A
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Pulsed (Icm) 25A
Voltage - Collector Emitter Breakdown (Max) 600V
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