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FQI50N06TU
| Part Number: | FQI50N06TU |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor / ON Semiconductor |
| Product description | MOSFET N-CH 60V 50A I2PAK |
| Datasheets: | 1.FQI50N06TU.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of FQI50N06TU
| Part Number | FQI50N06TU | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Series | QFET® | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 60V 50A I2PAK |
| FET Feature | - | Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | Quantity Available | 50054 pcs |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Detailed Description | N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Through Hole I2PAK (TO-262) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) | Supplier Device Package | I2PAK (TO-262) |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | Drain to Source Voltage (Vdss) | 60V |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 25V | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
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|---|---|---|
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