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HGTG10N120BND
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HGTG10N120BND

Part Number: HGTG10N120BND
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description IGBT 1200V 35A 298W TO247
Datasheets: 1.HGTG10N120BND.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of HGTG10N120BND

Part Number HGTG10N120BND Manufacturer AMI Semiconductor / ON Semiconductor
Series -IGBT Type NPT
Packaging TubeInput Type Standard
Description IGBT 1200V 35A 298W TO247Gate Charge 100nC
Power - Max 298WMounting Type Through Hole
Package / Case TO-247-3Test Condition 960V, 10A, 10 Ohm, 15V
Switching Energy 850µJ (on), 800µJ (off)Quantity Available 25035 pcs
Td (on/off) @ 25°C 23ns/165nsDetailed Description IGBT NPT 1200V 35A 298W Through Hole TO-247
Operating Temperature -55°C ~ 150°C (TJ)Supplier Device Package TO-247
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10AReverse Recovery Time (trr) 70ns
Current - Collector (Ic) (Max) 35ALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Pulsed (Icm) 80AMoisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) 1200V
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