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Home Products Discrete Semiconductor Products Transistors - IGBTs - Single RGT80TS65DGC11
LAPIS Semiconductor LAPIS Semiconductor
RGT80TS65DGC11
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RGT80TS65DGC11

Part Number: RGT80TS65DGC11
Manufacturer/Brand: LAPIS Semiconductor
Product description IGBT 650V 70A 234W TO-247N
Datasheets: 1.RGT80TS65DGC11.pdf 2.RGT80TS65DGC11.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of RGT80TS65DGC11

Part Number RGT80TS65DGC11 Manufacturer LAPIS Semiconductor
Series -IGBT Type Trench Field Stop
Packaging TubeInput Type Standard
Description IGBT 650V 70A 234W TO-247NGate Charge 79nC
Power - Max 234WMounting Type Through Hole
Package / Case TO-247-3Test Condition 400V, 40A, 10 Ohm, 15V
Switching Energy -Quantity Available 23128 pcs
Td (on/off) @ 25°C 34ns/119nsDetailed Description IGBT Trench Field Stop 650V 70A 234W Through Hole TO-247N
Operating Temperature -40°C ~ 175°C (TJ)Supplier Device Package TO-247N
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40AReverse Recovery Time (trr) 58ns
Current - Collector (Ic) (Max) 70ALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Pulsed (Icm) 120AMoisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) 650V
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