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Home Products Discrete Semiconductor Products Transistors - IGBTs - Single RGTV60TS65DGC11
LAPIS Semiconductor LAPIS Semiconductor
RGTV60TS65DGC11
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RGTV60TS65DGC11

Part Number: RGTV60TS65DGC11
Manufacturer/Brand: LAPIS Semiconductor
Product description 650V 30A FIELD STOP TRENCH IGBT
Datasheets: 1.RGTV60TS65DGC11.pdf
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Specifications of RGTV60TS65DGC11

Part Number RGTV60TS65DGC11 Manufacturer LAPIS Semiconductor
Series -IGBT Type Trench Field Stop
Input Type StandardDescription 650V 30A FIELD STOP TRENCH IGBT
Gate Charge 64nCPower - Max 194W
Mounting Type Through HolePackage / Case TO-247-3
Test Condition 400V, 30A, 10 Ohm, 15VSwitching Energy 570µJ (on), 500µJ (off)
Quantity Available 15641 pcsTd (on/off) @ 25°C 33ns/105ns
Detailed Description IGBT Trench Field Stop 650V 60A 194W Through Hole TO-247NOperating Temperature -40°C ~ 175°C (TJ)
Supplier Device Package TO-247NVce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Reverse Recovery Time (trr) 95nsCurrent - Collector (Ic) (Max) 60A
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Pulsed (Icm) 120A
Moisture Sensitivity Level (MSL) 1 (Unlimited)Voltage - Collector Emitter Breakdown (Max) 650V
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