Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
RN1110MFV,L3F
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RN1110MFV,L3F

Part Number: RN1110MFV,L3F
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS PREBIAS NPN 0.15W VESM
Datasheets: 1.RN1110MFV,L3F.pdf
Stock Condition N/A
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of RN1110MFV,L3F

Part Number RN1110MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Tape & Reel (TR)
Description TRANS PREBIAS NPN 0.15W VESMOther Names RN1110MFV(TL3,T) RN1110MFV(TL3T)TR RN1110MFV(TL3T)TR-ND RN1110MFV,L3F(B RN1110MFV,L3F(T RN1110MFVL3F RN1110MFVL3F-ND RN1110MFVL3FTR RN1110MFVTL3T
Power - Max 150mWMounting Type Surface Mount
Package / Case SOT-723Transistor Type NPN - Pre-Biased
Quantity Available 3746756 pcsDetailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Resistor - Base (R1) 4.7 kOhmsSupplier Device Package VESM
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mACurrent - Collector (Ic) (Max) 100mA
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Cutoff (Max) 100nA (ICBO)
Moisture Sensitivity Level (MSL) 1 (Unlimited)DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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