Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
RN4990FE,LF(CB
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RN4990FE,LF(CB

Part Number: RN4990FE,LF(CB
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheets: 1.RN4990FE,LF(CB.pdf 2.RN4990FE,LF(CB.pdf
Stock Condition N/A
Ship From Hong Kong
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of RN4990FE,LF(CB

Part Number RN4990FE,LF(CB Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Tape & Reel (TR)
Description TRANS NPN/PNP PREBIAS 0.1W ES6Other Names RN4990FE(T5L,F,T) RN4990FE(T5LFT)TR RN4990FE(T5LFT)TR-ND RN4990FE,LF(CT RN4990FELF(CBTR RN4990FELF(CTTR RN4990FELF(CTTR-ND
Power - Max 100mWMounting Type Surface Mount
Package / Case SOT-563, SOT-666Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Quantity Available 2062422 pcsDetailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Resistor - Base (R1) 4.7 kOhmsFrequency - Transition 250MHz, 200MHz
Supplier Device Package ES6Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mACurrent - Collector (Ic) (Max) 100mA
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Cutoff (Max) 100nA (ICBO)
Moisture Sensitivity Level (MSL) 1 (Unlimited)DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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