Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SI6562CDQ-T1-GE3
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SI6562CDQ-T1-GE3

Part Number: SI6562CDQ-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N/P-CH 20V 6.7A 8-TSSOP
Datasheets: 1.SI6562CDQ-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SI6562CDQ-T1-GE3

Part Number SI6562CDQ-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET®FET Type N and P-Channel
Packaging Cut Tape (CT)Description MOSFET N/P-CH 20V 6.7A 8-TSSOP
FET Feature Logic Level GateOther Names SI6562CDQ-T1-GE3CT
Power - Max 1.6W, 1.7WMounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)Base Part Number SI6562
Quantity Available 72214 pcsVgs(th) (Max) @ Id 1.5V @ 250µA
Detailed Description Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOPOperating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 22 mOhm @ 5.7A, 4.5VSupplier Device Package 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10VDrain to Source Voltage (Vdss) 20V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10VCurrent - Continuous Drain (Id) @ 25°C 6.7A, 6.1A
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