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SIHG33N65E-GE3
| Part Number: | SIHG33N65E-GE3 |
|---|---|
| Manufacturer/Brand: | Vishay / Siliconix |
| Product description | MOSFET N-CH 650V 32.4A TO-247AC |
| Datasheets: | 1.SIHG33N65E-GE3.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of SIHG33N65E-GE3
| Part Number | SIHG33N65E-GE3 | Manufacturer | Vishay / Siliconix |
|---|---|---|---|
| Series | - | IGBT Type | ±30V |
| Vgs (Max) | 10V | Technology | MOSFET (Metal Oxide) |
| Description | MOSFET N-CH 650V 32.4A TO-247AC | FET Feature | N-Channel |
| Other Names | SIHG33N65E-GE3DKR | RoHS Status | Digi-Reel® |
| Polarization | TO-247-3 | Mounting Type | Through Hole |
| Voltage - Test | 4040pF @ 100V | Capacitance Ratio | 313W (Tc) |
| Quantity Available | 13845 pcs | Vgs(th) (Max) @ Id | 105 mOhm @ 16.5A, 10V |
| Voltage - Breakdown | TO-247AC | Expanded Description | N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC |
| Operating Temperature | -55°C ~ 150°C (TJ) | Rds On (Max) @ Id, Vgs | 32.4A (Tc) |
| Manufacturer Part Number | SIHG33N65E-GE3 | Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | - | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 173nC @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 650V |
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| FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
|---|---|---|
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| TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
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