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TRS12E65C,S1Q
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TRS12E65C,S1Q

Part Number: TRS12E65C,S1Q
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description DIODE SCHOTTKY 650V 12A TO220-2L
Datasheets: 1.TRS12E65C,S1Q.pdf 2.TRS12E65C,S1Q.pdf
Stock Condition N/A
Ship From Hong Kong
Payment Discover Card/Paypal/Wire transfer/Visa
Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of TRS12E65C,S1Q

Part Number TRS12E65C,S1Q Manufacturer Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)Series -
Packaging TubeDiode Type Silicon Carbide Schottky
Description DIODE SCHOTTKY 650V 12A TO220-2LOther Names TRS12E65C,S1Q(S TRS12E65CS1Q
Mounting Type Through HolePackage / Case TO-220-2
Quantity Available 6903 pcsCapacitance @ Vr, F 65pF @ 650V, 1MHz
Detailed Description Diode Silicon Carbide Schottky 650V 12A (DC) Through Hole TO-220-2LSupplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0nsCurrent - Reverse Leakage @ Vr 90µA @ 170V
Lead Free Status / RoHS Status Lead free / RoHS CompliantVoltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 12A (DC)Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature - Junction 175°C (Max)Voltage - Forward (Vf) (Max) @ If 1.7V @ 12A
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