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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single R6012ANX
LAPIS Semiconductor LAPIS Semiconductor
R6012ANX
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R6012ANX

Part Number: R6012ANX
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CH 600V 12A TO-220FM
Datasheets: 1.R6012ANX.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of R6012ANX

Part Number R6012ANX Manufacturer LAPIS Semiconductor
Series -FET Type N-Channel
Packaging BulkVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V 12A TO-220FM
FET Feature -Mounting Type Through Hole
Package / Case TO-220-3 Full PackQuantity Available 18488 pcs
Vgs(th) (Max) @ Id 4.5V @ 1mADetailed Description N-Channel 600V 12A (Ta) 50W (Tc) Through Hole TO-220FM
Operating Temperature 150°C (TJ)Rds On (Max) @ Id, Vgs 420 mOhm @ 6A, 10V
Power Dissipation (Max) 50W (Tc)Supplier Device Package TO-220FM
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10VDrain to Source Voltage (Vdss) 600V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
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